electro-absorption modulators (EAM) based on Franz-Keldysh effect [2] with a modulation speed of over 50GHz and a capacitance of 10fF. The Ge EAM devices are integrated in SiPh platform on 200mm silicon-on-insulator, We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide.
12/16/2020 · In addition, monolithic integration of both evanescent-coupled Ge electro-absorption modulator and Ge p-i-n photodetector is demonstrated for the first time. View full-text.
The presented Ge electro-absorption modulator is designed to exploit the Franz-Keldysh (FK) effect, which enables the modulation of the absorption coefficient of bulk Ge by an applied electric …
A high-speed evanescent-coupled Ge waveguide electro-absorption modulator (EAM) with simple fabrication processes was realized on a silicon-on-insulator platform with a 220 nm top Si layer. Selectively grown Ge with a triangle shape was directly used for Ge waveguides of the EAM.
input level in Ge MQW electro-absorption modulator to be. the power level that induces nonlinearity, such as two-photon. absorption or four-wave mixing, as in Si electro-refracti ve.
12/3/2013 · In practice one could expect the maximum input level in Ge MQW electro-absorption modulator to be the power level that induces nonlinearity, such as two-photon absorption or four-wave mixing, as in Si electro-refractive modulators. This nonlinearity power level is normally beyond that required in one-channel telecommunication systems.
In conclusion, we have demonstrated the first high speed GeSi EA modulator integrated with a 3 µm SOI waveguide with a working wavelength near 1550 nm based on the Franz-Keldysh (FK) effect. The demonstrated modulator has a 3 dB bandwidth of 40.7 GHz and a broad operating wavelength range of 35 nm near 1550 nm.
The nanoelectronics research center imec, its associated lab at Ghent University (Intec), and Stanford University have demonstrated a compact germanium ( Ge ) waveguide electro-absorption modulator (EAM) with a modulation bandwidth beyond 50 GHz.
Electro-absorption modulator. MODE INTERCONNECT Photonic Integrated Circuits – Active. Model and simulate a Germanium-Silicon (GeSi) electro-absorption modulator (EAM) on Silicon-on-insulator (SOI). The eigenmode expansion (EME) and CHARGE solvers are used to simulate the modulator, and a compact model for the device is created in INTERCONNECT.
